h ? P Finite Element Approximation for Full-PotentialElectronic Structure Calculations

Citation:

Yvon MADAY.h ? P Finite Element Approximation for Full-PotentialElectronic Structure Calculations[J].Chinese Annals of Mathematics B,2014,35(1):1~24
Page view: 1935        Net amount: 1570

Authors:

Yvon MADAY;
Abstract: The (continuous) finite element approximations of different orders for the computation of the solution to electronic structures were proposed in some papers and the performance of these approaches is becoming appreciable and is now well understood. In this publication, the author proposes to extend this discretization for full-potential electronic structure calculations by combining the refinement of the finite element mesh, where the solution is most singular with the increase of the degree of the polynomial approximations in the regions where the solution is mostly regular. This combination of increase of approximation properties, done in an a priori or a posteriori manner, is well-known to generally produce an optimal exponential type convergence rate with respect to the number of degrees of freedom even when the solution is singular. The analysis performed here sustains this property in the case of Hartree-Fock and Kohn-Sham problems.

Keywords:

Electronic structure calculation, Density functional theory, Hartree-Fock model, Kohn-Sham model, Nonlinear eigenvalue problem, h ? Pversion, Finite element method

Classification:

65N25, 65N30, 65T99, 35P30, 35Q40, 81Q05
Download PDF Full-Text

主管单位:国家教育部 主办单位:复旦大学 地址:220 Handan Road, Fudan University, Shanghai, China E-mail:edcam@fudan.edu.cn

本系统由北京勤云科技发展有限公司提供技术支持